Cmos image sensor structure

ABSTRACT

A CMOS image sensor (CIS) process is described. A semiconductor substrate is provided, and then a gate dielectric layer, a gate material layer and a thickening layer are sequentially formed on the substrate, wherein the thickening layer includes at least a hard mask layer. The thickening layer is defined to form a transfer-gate pattern, and then the transfer-gate pattern is used as an etching mask to pattern the gate material layer and form a transfer gate. Ion implantation is then conducted to form a PN diode in the substrate with the transfer-gate pattern and the transfer gate as a mask.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of an application Ser. No. 11/470,631,filed on Sep. 7, 2006, now pending. The entirety of each of theabove-mentioned patent applications is hereby incorporated by referenceherein and made a part of this specification.

BACKGROUND OF THE INVENTION

1. Field of Invention

The present invention relates to fabrication and structures of asemiconductor device, and more particularly to a complementarymetal-oxide-semiconductor (CMOS) image sensor (CIS) process and a CISstructure.

2. Description of Related Art

The CMOS image sensor is utilized more and more widely in imagerecording as compared with the charge-coupled device (CCD), for itsfabricating process can be easily integrated with a conventional CMOSprocess lowering the manufacturing cost.

A typical CMOS image sensor includes a PN diode for absorbing incidentlight to produce charges, and a transfer transistor for transferring thecharges. Referring to FIG. 3, in a conventional CIS process, the gate302 of the transfer transistor is formed on a substrate 300, and aphotoresist pattern 304 is formed exposing an area of the substrate 300predetermined for forming the diode, wherein a portion of the gate 302is usually exposed to make sure that the area is entirely exposed. Ionimplantation 306 is then performed to form the doped region 308 of thediode, wherein the implantation depth is much larger than that inordinary S/D implantation to reduce the dark current.

However, since the implantation depth is usually larger than thethickness of the gate 302 and a portion of the gate 302 is exposed inthe implantation, a shallower doped region 309 is also formed under thegate 302 beside the doped region 308. Thus, the dark current under thegate 302 cannot be decreased effectively.

SUMMARY OF THE INVENTION

In view of the foregoing, this invention provides a CIS process that canreduce the dark current effectively and thereby improve the contrast ofthe recorded image.

This invention also provides a CIS structure that can be fabricatedthrough the CIS process of this invention.

The CIS process of this invention is described as follows. Asemiconductor substrate is provided, and then a gate dielectric layer, agate material layer and a thickening layer are sequentially formed onthe substrate, wherein the thickening layer includes at least a hardmask layer. The thickening layer is defined to form a transfer-gatepattern, and then the transfer-gate pattern is used as an etching maskto pattern the gate material layer and form a transfer gate. Ionimplantation is then done to form a PN diode in the substrate with thetransfer-gate pattern and the transfer gate as a mask.

In an embodiment, after the transfer-gate pattern is formed, aphotoresist pattern may be further formed over a portion of the gatematerial layer predetermined for a reset gate, and then the photoresistpattern and the transfer-gate pattern are used as an etching mask topattern the gate material layer and form a transfer gate and a resetgate.

Moreover, the above thickening layer may be a hard mask layer or acomposite layer including a hard mask layer. In an embodiment, thethickening layer includes a dielectric layer, a conductive layer and ahard mask layer from bottom to top, and is defined to form thetransfer-gate pattern and an upper electrode of capacitor at the sametime. A photoresist pattern is then formed over a portion of the gatematerial layer predetermined for a reset gate and another portion forthe lower electrode of capacitor, and is used together with thetransfer-gate pattern as an etching mask to pattern the gate materiallayer into a transfer gate, a reset gate and a lower electrodesimultaneously.

The CIS structure of this invention includes a semiconductor substrate,a gate dielectric layer on the substrate, a transfer gate on the gatedielectric layer, a thickening layer at least on the gate, and a PNdiode including a PN junction in the substrate beside the transfer gate.The depth of the PN junction is smaller than the total thickness of thetransfer gate and the thickening layer.

In some embodiments, the above CIS structure further includes a resetgate on the gate dielectric layer, the reset gate being defined togetherwith the transfer gate from the same gate material layer.

Moreover, the thickening layer may be a hard mask layer or a compositelayer including a hard mask layer. In cases where the thickening layeris a composite layer, the CIS structure may also include a reset gateand a capacitor, wherein the thickening layer includes a dielectriclayer and a conductive layer thereon and is also disposed on the lowerelectrode of capacitor to serve as the capacitor dielectric layer andthe upper electrode of the capacitor. The reset gate and the lowerelectrode of the capacitor are defined together with the transfer gatefrom the same gate material layer.

Since a thickening layer is disposed on the transfer gate in the CISprocess of this invention, the PN junction of the photodiode can beformed deeply in the substrate without forming a doped region under thetransfer gate in the ion implantation. Hence, the dark current of theCMOS image sensor can be lowered effectively.

In order to make the aforementioned and other objects, features andadvantages of the present invention comprehensible, a preferredembodiment accompanied with figures is described in detail below.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1C illustrate, in a cross-sectional view, a CIS processaccording to a first embodiment of this invention.

FIGS. 2A-2C illustrate, in a cross-sectional view, a CIS processaccording to a second embodiment of this invention.

FIG. 3 illustrates a conventional CIS process in a cross-sectional view.

DESCRIPTION OF EMBODIMENTS

Two embodiments of this invention are described below in reference ofFIGS. 1A-1C and 2A-2C, respectively. The two embodiments are provide tofurther explain the present invention, but are not intended to limit thescope of this invention.

First Embodiment

FIGS. 1A-1C illustrate, in a cross-sectional view, a CIS processaccording to the first embodiment of this invention, wherein thethickening layer is a hard mask layer.

Referring to FIG. 1A, a semiconductor substrate 100 like a p⁻-dopedsingle-crystal Si-substrate is provided, possibly formed with anisolation structure 110 therein. The isolation structure 110 may be ashallow trench isolation (STI) structure or a field oxide layer formedwith local Si-oxidation, and a portion thereof may be formed with adoped region 112 around as field isolation, wherein the conductivitytype of the doped region 112 is the same as that of the substrate 100.Then, a gate dielectric layer 120, a gate material layer 130 and a hardmask layer 140 as a thickening layer are formed on the substrate 100 insequence. The gate dielectric layer 120 may include silicon oxide formedthrough thermal oxidation, the gate material layer 130 may includepoly-Si, and the hard mask layer 140 may include silicon oxide, siliconnitride or silicon oxynitride (SiON). In a preferred embodiment, anetching stop layer 133 is formed on the gate material layer 130 beforethe hard mask layer 140 is formed for precisely controlling the etchingof the hard mask layer 140. It is possible that the hard mask layer 140includes one of silicon oxide and silicon nitride and the etching stoplayer 133 includes the other one of silicon oxide and silicon nitride inconsideration of the performance of stopping the etching to the hardmask layer 140.

Referring to FIG. 1B, the hard mask layer 140 is patterned into atransfer-gate pattern 140 a. In cases where an etching stop layer 133 isformed under the hard mask layer 140, the etching recipe for patterningthe hard mask layer 140 has a low etching selectivity to the material ofthe etching stop layer 133 so that the etching can be easily stoppedthereon. Then, a photoresist pattern 150 is formed over a portion of thegate material layer 130 predetermined for forming a reset gate (130 b inFIG. 1C), i.e., the gate of a reset transistor (198 in FIG. 1C).

Referring to FIG. 1C, the transfer-gate pattern 140 a and thephotoresist pattern 150 are used as an etching mask to pattern the gatematerial layer 130 into a transfer gate 130 a and a reset gate 130 bsimultaneously, and then the photoresist pattern 150 is removed. Thetransfer-gate pattern 140 a formed from the hard mask layer 140, theetching stop layer 133 (optional), the transfer gate 130 a and the gatedielectric layer 120 under 130 a together constitute a transfer gatestructure 152. Meanwhile, the reset gate 130 b, the etching stop layer133 on the reset gate 130 b and the gate dielectric layer 120 under 130b together constitute a reset gate structure 154. After the reset gate130 b is formed, the etching stop layer 133 on the reset gate 130 b maybe removed, or may be kept to serve as a cap layer for the underlyingreset gate 130 b.

Then, a doped region 170, which is n-doped when the substrate 100 is ofp-type, is formed in the substrate 100 through ion implantation usingthe transfer gate structure 152 as a mask, so as to form a PN diode withthe substrate 100. A p-doped region 180 is optionally formed in thesubstrate 100 over and apart from the PN junction of the n-doped region170 with the transfer gate structure 152 as a mask, possibly before orafter the n-doped region 170 is formed, so as to improve the sensitivityof the CIS. The one implantation step for forming the doped region 170or the two implantation steps for forming the doped regions 170 and 180also require a patterned photoresist layer as shown in FIG. 3 (see 304)to serve as an implantation mask, while the patterned photoresist layeris omitted in FIG. 1C for simplicity. In addition, heavily doped S/Dregions 190 having the same conductivity type of the doped region 170are formed in the substrate 100 using the reset gate structure 154 andthe transfer gate structure 152 as a mask, while the patternedphotoresist layer covering the other portions of the substrate 100 isalso omitted in FIG. 1C for simplicity. It is also noted that the S/Dregions 190 may be formed before or after the doped region 170 isformed. The transfer gate structure 152 and one S/D region 190 togetherconstitute a transfer transistor 194, while the reset gate structure 154and the two S/D regions 190 together form a reset transistor 198. Thetransfer transistor 194 and the reset transistor 198 share one S/Dregion 190.

Since a transfer-gate pattern 140 a as a thickening layer is formed onthe transfer gate 130 a in the CIS process according to the aboveembodiment, the PN junction of the photodiode between the substrate 100and the dope region 170 can be formed deeply without forming a dopedregion under the transfer gate 130 a as in FIG. 3. Hence, the darkcurrent of the CMOS image sensor can be lowered effectively.

Moreover, after the photodiode including the doped region 170 is formed,the transfer-gate pattern 140 a may be kept or be removed. In caseswhere the transfer-gate pattern 140 a is removed, the etching stop layer133 on the transfer gate 130 a and the reset gate 130 b may be kept orbe removed after 140 a is removed.

Second Embodiment

FIGS. 2A-2C illustrate, in a cross-sectional view, a CIS processaccording to the second embodiment of this invention, wherein thethickening layer is a composite layer including a dielectric layer, aconductive layer and a hard mask layer from bottom to top, and acapacitor is fabricated simultaneously with the gate structures.

Referring to FIG. 2A, a semiconductor substrate 200 formed with anisolation structure 210 therein is provided, wherein the isolationstructure 210 may be the same as the above isolation structure 110, anda portion thereof may be formed with a doped region 212 around as fieldisolation like the above doped region 112. A gate dielectric layer 220,a gate material layer 230 and a thickening layer 240 are sequentiallyformed on the substrate 200, wherein the thickening layer 240 includes adielectric layer 242, a conductive layer 244 and a hard mask layer 246in the sequence of their formations. The materials of the gatedielectric layer 220 and the gate material layer 230 may be the same asthose of the above gate dielectric layer 120 and the above gate materiallayer 130. The dielectric layer 242 includes a material that suitablyserves as a capacitor dielectric material, such as silicon oxide,silicon nitride or a high-k material. The conductive layer 244 mayinclude poly-Si, and the hard mask layer 246 may include silicon oxide,silicon nitride or SiON.

Referring to FIG. 2B, the hard mask layer 246 and the conductive layer244 are patterned to form a transfer-gate pattern 244 a and an upperelectrode 244 b of a capacitor, while the dielectric layer 242 may serveas an etching stop layer. The upper electrode 244 b and the lowerelectrode formed later are generally disposed over the isolationstructure 210. Then, a photoresist pattern 250 is formed covering aportion of the gate material layer 230 predetermined for forming a resetgate (230 b in FIG. 2C) as well as another portion of the samepredetermined for forming a lower electrode (230 c in FIG. 2C) of thecapacitor.

Referring to FIG. 2C, the transfer-gate pattern 244 a with the hard masklayer 246 thereon and the photoresist pattern 250 are used as an etchingmask to pattern the gate material layer 230 into a transfer gate 230 a,a reset gate 230 b and a lower electrode 230 c simultaneously, and thenthe photoresist pattern 250 is removed. The transfer-gate pattern 244 a,the dielectric layer 242 under 244 a and the hard mask layer on 244 atogether constitute a patterned thickening layer 240 a on the transfergate 230 a, and the patterned thickening layer 240 a, the transfer gate230 a and the gate dielectric layer 220 under the transfer gate 230 atogether constitute a transfer gate structure 252. The reset gate 230 b,the dielectric layer 242 on 230 b and the gate dielectric layer 220under 230 b together constitute a reset gate structure 254. In addition,the lower electrode 230 c, the upper electrode 244 b and the dielectriclayer 242 between them together constitute a capacitor 256. After thereset gate 230 b is formed, the dielectric layer 242 on the reset gate230 b may be removed, or may be kept to serve as a cap layer.

Then, a doped region 270, which is n-doped when the substrate 200 is ofp-type, is formed in the substrate 200 through ion implantation usingthe transfer gate structure 252 as a mask, so as to form a PN diode withthe substrate 200. A p-doped region 280 is optionally formed in thesubstrate 200 over and apart from the PN junction of the n-doped region270 with the transfer gate structure 252 as a mask, possibly before orafter the n-doped region 170 is formed, so as to improve the sensitivityof the CIS. The patterned photoresist layer required for the ionimplantation as shown in FIG. 3 is omitted in FIG. 2C for simplicity, asin the case of the first embodiment. In addition, heavily doped S/Dregions 290 having the same conductivity type of the doped region 270are formed in the substrate 200 using the reset gate structure 254 andthe transfer gate structure 252 as a mask, while the patternedphotoresist layer covering the other portions of the substrate 200 isalso omitted in FIG. 2C for simplicity. It is also noted that the S/Dregions 290 may be formed before or after the doped region 270 isformed. The transfer gate structure 252 and one S/D region 290 togetherconstitute a transfer transistor 294, and the reset gate structure 254and the two S/D regions 290 together constitute a reset transistor 298.The transfer transistor 294 and the reset transistor 298 thus share oneS/D region 290.

Since a patterned thickening layer 240 a is disposed on the transfergate 230 a in the CIS process according to the above embodiment, the PNjunction of the photodiode between the substrate 200 and the dope region270 can be formed deeply without forming a doped region under thetransfer gate 230 a as in FIG. 3. Hence, the dark current of the CMOSimage sensor can be lowered effectively.

Moreover, after the photodiode including the doped region 270 is formed,the hard mask layer 246 may be kept or be removed. That is, thethickening layer 240 a on the transfer gate 230 a may include adielectric layer 242 and a transfer-gate pattern 244 a only, and mayfurther include a hard mask layer on the transfer-gate pattern 244 a.

The present invention has been disclosed above in the preferredembodiments, but is not limited to those. It is known to persons skilledin the art that some modifications and innovations may be made withoutdeparting from the spirit and scope of the present invention. Therefore,the scope of the present invention should be defined by the followingclaims.

What is claimed is:
 1. A CMOS image sensor (CIS) structure, comprising:a semiconductor substrate; a gate dielectric layer on the substrate; atransfer gate on the gate dielectric layer; a thickening layer disposedat least on the transfer gate; and a PN diode including a PN junction inthe substrate beside the transfer gate, wherein a depth of the PNjunction is smaller than a total thickness of the transfer gate and thethickening layer.
 2. The CIS structure of claim 1, wherein thethickening layer comprises a hard mask layer.
 3. The CIS structure ofclaim 2, wherein the hard mask layer comprises silicon oxide, siliconnitride or SiON.
 4. The CIS structure of claim 2, further comprising anetching stop layer between the transfer gate and the hard mask layer. 5.The CIS structure of claim 4, wherein the etching stop layer comprisesone of silicon oxide and silicon nitride and the hard mask layercomprises the other one of silicon oxide and silicon nitride.
 6. The CISstructure of claim 1, further comprising a reset gate on the gatedielectric layer, the reset gate being defined together with thetransfer gate from a gate material layer.
 7. The CIS structure of claim6, wherein the thickening layer comprises a hard mask layer.
 8. The CISstructure of claim 7, further comprising an etching stop layer betweenthe transfer gate and the hard mask layer.
 9. The CIS structure of claim8, wherein the etching stop layer is also disposed on the reset gate.10. The CIS structure of claim 1, wherein the diode comprises an n-dopedregion that forms the PN junction with the substrate, further comprisinga p-doped region in the substrate over and apart from the PN junction.11. The CIS structure of claim 1, wherein the thickening layer comprisesa composite layer.
 12. The CIS structure of claim 11, further comprisinga reset gate as well as a capacitor that includes a lower electrode, anupper electrode and a capacitor dielectric layer between the lowerelectrode and the upper electrode, wherein the thickening layercomprises a dielectric layer and a conductive layer thereon, and is alsodisposed on the lower electrode to serve as the capacitor dielectriclayer and the upper electrode of the capacitor; and the reset gate andthe lower electrode of the capacitor are defined together with thetransfer gate from a gate material layer.
 13. The CIS structure of claim12, wherein the reset gate has a cap layer thereon that is definedtogether with the capacitor dielectric layer from the same layer of adielectric material.
 14. The CIS structure of claim 12, wherein thethickening layer further comprises a hard mask layer on the conductivelayer.
 15. The CIS structure of claim 14, wherein the reset gate has acap layer thereon that is defined together with the capacitor dielectriclayer from the same layer of a dielectric material.
 16. The CISstructure of claim 14, wherein the hard mask layer comprises siliconoxide, silicon nitride or SiON.
 17. The CIS structure of claim 12,wherein the lower electrode and the upper electrode both comprisepoly-Si so that the capacitor is a poly-Si/insulator/poly-Si (PIP)capacitor.